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BAR 65-02W
Silicon RF Switching Diode Preliminary data * Low loss, low capacitance PIN-diode * Band switch for TV-tuners * Series diode for mobile communication transmit-receiver switch
2
1
VES05991
Type BAR 65-02W
Marking N
Ordering Code Q62702-A1216
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100 - 55 ...+125 - 55 ...+150 Unit V mA C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Jun-18-1998 1998-11-01
BAR 65-02W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 nA V Unit
IR VF
-
VR = 20 V
Forward voltage
I F = 100 mA
AC characteristics Diode capacitance
CT
0.6 0.57 0.65 0.56 0.6 0.9 0.8
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf
0.95 0.9 -
I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz
Series inductance
Ls
-
nH
Semiconductor Group Semiconductor Group
22
Jun-18-1998 1998-11-01
BAR 65-02W
Forward current IF = f (V F)
T A = 25C
10 3
mA
Forward resistance rf = f(IF) f = 100MHz
3.0 Ohm
10 2
2.4
IF
RF
2.2 2.0 1.8
10 1
1.6 1.4 1.2 1.0
10
0
0.8 0.6 0.4 0.2
10 -1 400
500
600
700
800
mV
1000
0.0 -1 10
10
0
mA
VF
IF
Diode capacitance CT = f (V R) f = 1MHz
Diode capacitance CT = f (VR) f = 100MHz
1.0
1.0
pF
pF
CT
0.8
CT
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2 0
1
2
3
4
5
6
7
8
V
10
0.2 0
1
2
3
4
5
6
7
8
V
10
VR
VR
Semiconductor Group Semiconductor Group
33
Jun-18-1998 1998-11-01

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